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.com
Volume 4, Issue 4 (Suppl)
J Laser Opt Photonics, an open access journal
ISSN: 2469-410X
Optics 2017
November 15-17, 2017
November 15-17, 2017 | Las Vegas, USA
8
th
International Conference and Exhibition on
Lasers, Optics & Photonics
Ilkay Demir et al., J Laser Opt Photonics 2017, 4:4 (Suppl)
DOI: 10.4172/2469-410X-C1-017
High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications
Ilkay Demir
1,2
, Hongjian. Li
3
, Yoann Robin
2
, Ryan McClintock
2
, Ismail Altuntas
1
, Sezai Elagoz
1
, Konstantinos Zekentes
2,4
,
and
Manijeh Razeghi
2
1
Cumhuriyet University, Turkey
2
Northwestern University, USA
3
University of California, Santa Barbara, USA
4
Foundation for Research & Technology-Hellas (FORTH), Greece
T
he growth of thick, high quality and low-stress AlN films on Si and Al
2
O
3
substrates is highly desired for a number of applications
like the development of micro and nanoelectromechanical system (MEMS and NEMS) technologies and particularly for
fabricating AlGaN based UV-LEDs. UV-LEDs are attractive as they are applied in many areas, such as air and water sterilization,
efficient white lighting, high-density optical data storage and military applications such as biological agent detection and non-line-
of-sight communication. However, the development of UV-LEDs on Si substrates is highly desired for a series of reasons like the
availability of cheap, large-diameter silicon wafers, the much lower device processing costs, and the possibility of monolithical
integration of the UV-LEDs with Si circuitry. In addition, efficient AlGaN based deep UV-LEDs require layers and substrates which
are transparent in UV light. So, it is preferable to grow the AlGaN based deep UV-LEDs active layers on Si substrates as the Si can
be removed by chemical treatment to allow back illumination and avoid the generation and reabsorption of UV light by backside
emission. These advantages make silicon an attractive substrate for AlGaN based UV devices. Additionally high quality AlN template
on Al
2
O
3
substrate still is the key layer to grow high quality AlN and high Al content AlGaN materials for DUV applications since
AlN substrate price and size are not suitable for mass production.
Biography
Ilkay Demir has completed his PhD at the age of 32 years from Cumhuriyet University, Physics Department. He is the researcher of Nanophotonics Research and
Application Center and Department of Nanotechnology Enginnering. He spent 1 year of his PhD at Center for Quantum Devices under supervision of Prof. Manijeh Razeghi.
He has published 5 papers in reputed journals.
idemir@cumhuriyet.edu.tr