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conferenceseries .com
Volume 4, Issue 4 (Suppl) J Laser Opt Photonics, an open access journal
ISSN: 2469-410X Optics 2017
November 15-17, 2017
November 15-17, 2017 | Las Vegas, USA
8th International Conference and Exhibition on
Lasers, Optics & Photonics
Hydride vapor phase epitaxy growth of III-V nanostructures for high performance devices
Geoffrey Avit
Université Clermont Auvergne, France
III-V semiconductors have a direct bandgap that can be tuned through alloy engineering and therefore appear as very interesting
for solar-cells, solid-state lighting and high power applications. The performances of current devices may be increased through the
use of nanostructures and nanowires which look promising for the integration of high efficiency devices. Nanowires exhibit great
properties such as efficient strain relieving capability and large specific area. Growth on silicon substrates and core-shell structures can
be considered as well. Still, the production of nanowire-based devices faces material challenges related to morphological, structural,
optical and electrical properties which are very much linked to the synthesis process. This presentation will focus on hydride vapor
phase epitaxy, which is a growth process implemented in a hot wall reactor using chloride precursors and showing unique features
regarding the growth of III-V and III-nitride nanowires. For example, self-catalyzed GaAs nanowires were grown on silicon at a faster
growth rate (60 µm.h-1) exhibiting a constant zinc-blende crystalline phase, for the potential fabrication of GaAs-based photonic
devices on Si. For III-nitride materials, InGaN nanowires demonstrating the entire composition range were grown by using a method
compatible with the standard GaCl-based GaN growth process. Photoluminescence coupled with transmission electron microscopy
measurements showed that these nanowires could overcome the so-called green gap and stretch the limits of solar cells efficiency. By
taking advantage of the large growth rates anisotropy resulting from the use of chloride precursors, we could freely tune the shape of
GaN wires on masked substrates with (sub)-micrometric apertures.
Biography
Geoffrey Avit has completed his PhD in the year 2014 from Blaise Pascal University. He is currently a Post-doctoral Reseacher at Institut Pascal (France), a leading labo-
ratory in the field of HVPE growth of III-V nanostructures.
Geoffrey Avit, J Laser Opt Photonics 2017, 4:4 (Suppl)
DOI: 10.4172/2469-410X-C1-017