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Volume 4, Issue 4 (Suppl)
J Laser Opt Photonics, an open access journal
ISSN: 2469-410X
Optics 2017
November 15-17, 2017
November 15-17, 2017 | Las Vegas, USA
8
th
International Conference and Exhibition on
Lasers, Optics & Photonics
Extended short wave infrared photodetectors
Doron Cohen Elias
Soreq NRC, Israel
E
xtended short wave infrared (eSWIR) photodetectors are used in night vision applications which detect reflected night glow and
black body radiation.They also detect atmospheric gases which have high absorption coefficient between 2.5 and 3 µmwavelengths.
Type II superlattice (T2SL) epi-structures grown on GaSb and InP substrates, with flexible cut-off wavelength ranging between 2 to
3 µm and a homogenous InPSb layer, lattice matched to a GaSb substrate, with a photoluminescence peak at 2.9 µm, are candidate
technologies for eSWIR detectors. In this study, we fabricated and characterized photodetectors based on three different technologies:
T2SL InAs/AlSb, T2SL InGaAs/GaAsSb and InPSb. The epi-grown layers were characterized using photoluminescence (PL) and high
resolution XRD (HRXRD) tools and the photodetectors performances were measured and compared using semiconductor device
parameter analyzer, Fourier transform infrared (FTIR) and Black Body tools.
Biography
Doron Cohen Elias has completed his PhD from Technion, Israel Institute of Technology. From 2012 to 2014, he was a Post-doctoral at the University of California Santa
Barbara (UCSB). Since September 2014, he is a Research Scientist with the Nuclear Research Center, Soreq (Soreq NRC). He has published more than 30 publications
in reputed journals and conferences.
doronco@soreq.gov.ilDoron Cohen Elias, J Laser Opt Photonics 2017, 4:4 (Suppl)
DOI: 10.4172/2469-410X-C1-017