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Volume 4, Issue 4 (Suppl) J Laser Opt Photonics, an open access journal
ISSN: 2469-410X Optics 2017
November 15-17, 2017
November 15-17, 2017 | Las Vegas, USA
8th International Conference and Exhibition on
Lasers, Optics & Photonics
Room-temperature-protonation-driven optoelectronic device with water-gated thin-film-transistor
structure
Takayoshi Katase1,2,3 and Hiromichi Ohta2
1Tokyo Institute of Technology, Japan
2Hokkaido University, Japan
3Japan Science and Technology Agency, Japan
Using the flexible valence state of transition-metal ions in transition metal oxides (TMOs), the optoelectronic properties can be
largely controlled through the electronic phase transitions. Protonation of TMOs is one of the modulation techniques because
the proton in TMOs acts as shallow donors to donate an electron into TM cations, resulting in a dramatic change in the optoelectronic
properties. However, the protonation needs high-temperature heating process or electrochemistry in liquid electrolyte and thus it
has not been suitable for the device application. In this talk, we propose a new approach of RT-protonation of TMOs by using a
solid-state thin-film-transistor-type structure with “liquid-leakage-free water”, in which water is infiltrated in a nanoporous glass,
as the gate insulator and demonstrate the RT-protonation-driven infrared (IR) transmittance tunable metal-insulator conversion
device by using a thermochromic vanadium dioxide (VO2) as the active channel layer. Alternative positive and negative gate-voltage
applications induce the reversible protonation/deprotonation of VO2 channel and the double-digit sheet-resistance modulation and
49% modulation of IR-transmittance were simultaneously demonstrated at RT by the metal-insulator phase conversion of VO2 in a
non-volatile manner. The present device is operable by the RT-protonation in all-solid-state structure and thus it will provide a new
gateway for the development of functional optoelectronic devices.
Biography
Takayoshi Katase is currently working as an Associate Professor of Laboratory for Materials and Structures at Tokyo Institute of Technology, Japan. He obtained his BS
from Tokyo Institute of Technology, Japan in 2007 and MS from Tokyo Institute of Technology, Japan in 2009 and a PhD from Tokyo Institute of Technology, Japan in 2012.
In 2012, he worked as a Post-doctoral Researcher in FIRST Program, JSPS. In 2012, he worked as an Assistant Professor of Research Institute of Electronic Science,
Hokkaido University, Japan. In 2016, he worked as a Researcher in PRESTO (Scientific Innovation for Energy Harvesting Technology), JST, Japan.
Takayoshi Katase et al., J Laser Opt Photonics 2017, 4:4 (Suppl)
DOI: 10.4172/2469-410X-C1-017