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Volume 4, Issue 4 (Suppl)

J Laser Opt Photonics, an open access journal

ISSN: 2469-410X

Optics 2017

November 15-17, 2017

November 15-17, 2017 | Las Vegas, USA

8

th

International Conference and Exhibition on

Lasers, Optics & Photonics

Recent progress of AlGaN-based deep-ultraviolet light-emitting diodes

Masafumi Jo

and

Hideki Hirayama

RIKEN Brain Science Institute, Japan

A

lGaN deep ultraviolet light-emitting diodes (DUV-LEDs) and laser diodes (LDs) are attracting a great deal of attention, since

they have the potential to be used in a wide variety of applications, such as for sterilization, water purification, UV curing and

in the Medical and Biochemistry fields and so on. As a result of recent developments in AlGaN DUV LEDs, high internal quantum

efficiencies (IQE) of more than 60-70% have been achieved by reducing the threading dislocation density (TDD) of the AlN, by

improving the crystal growth technique and/or by the introduction of AlN single crystal wafers. However, the wall-plug efficiency

(WPE) of AlGaN DUV-LEDs still remains at several percent. The first target for the efficiency of AlGaN DUV-LEDs is to go beyond

an efficiency of 20%, which would make them comparable to mercury lamps. In this work, we demonstrate an external quantum

efficiency (EQE) of over 20% in an AlGaN DUV-LED by a significant improvement of light extraction efficiency (LEE). In order

to increase LEE of DUV LEDs, we introduced a transparent p-AlGaN contact layer, a highly reflective p-type electrode and AlN

template buffer fabricated on patterned sapphire substrate (PSS). By introducing transparent p-AlGaN contact layer and reflective

electrode, LEE was enhanced by approximately 3 times. We also tried to increase wall plug efficiency (WPE) by reducing the applying

voltage that was increased by increasing p-AlGaN contact resistance. By optimizing p-AlGaN layer structures, we have succeeded in

reducing the operating voltage of DUV LED and obtained record WPE of 9.6%.

Biography

Masafumi Jo has received his PhD from the University of Tokyo in 2003. He is the Researcher of Quantum Optodevice Laboratory at RIKEN. He has worked on fabricating

nano-structured solid-state light sources.

masafumi.jo@riken.jp

Masafumi Jo et al., J Laser Opt Photonics 2017, 4:4 (Suppl)

DOI: 10.4172/2469-410X-C1-017