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Volume 7, Issue 4(Suppl)

J Nanomed Nanotechnol

ISSN: 2157-7439 JNMNT, an open access journal

Page 72

Nano Congress 2016

August 01-02, 2016

conferenceseries

.com

August 01-02, 2016 Manchester, UK

9

th

Nano Congress for Next Generation

Semiconductor quantum cones: Unique source of photons and electrons

Arturs Medvids

Riga Technical University, Latvia

N

anostructures are one of the most investigated objects in semiconductor physics, especially due to quantum confinement effect

in quantum dots (0D), quantum wires (1D) and quantum wells (2D). A new laser technology elaborated for quantum cone

formation in semiconductors is reported. A cone possesses the following unique properties: A small cone with angle α=60

o

at the

top of the cone is a quantum dot – 0D, when α=0o is transformed to a quantum well – 2D and when a long one with α<60

o

is

transformed to a quantum wire – 1D with the gradually decreasing diameter from the base till the top of the cone. Luminesce of

such a quantum cone resembles rainbow. Where radii in cone are equal or less than Bohr’ radius of electron, exciton or phonon

Quantum Confinement Effect (QCE) takes place. Quantum cones on the surface of elementary semiconductors Si and Ge single

crystals, and Si1-xGex (x=0.3 and x=0.4) solid solution were formed by fundamental frequency and second harmonic of Nd:YAG

laser radiation. Strong change of the optical, mechanical and electrical properties of the semiconductors after irradiation by Nd:YAG

laser are explained by the presence of QCE in quantum cones. “Blue shift” of photoluminescence spectra and “red shift” of phonon

LO line in Raman spectrum are explained by exciton and phonon QCE in quantum cones, correspondently. Asymmetry of the

photoluminescence band in the spectrum of Si quantum cones is explained by formation of graded band gap structure. Experimental

data on quantum cones formation on a surface of Si, Ge crystals and their solid solution and their optical and electric properties

are presented. Two-stage model of quantum cones’ formation on the irradiated surface of the semiconductors is proposed. The first

stage of the cones formation is characterized by the formation of a thin strained top layer, due to the redistribution of point defects in

temperature-gradient field induced by strongly absorbed by laser radiation. As a result, p-n junction and hetero junction are formed

in Ge crystal and SiGe solid solution, correspondently. The second stage is characterized by mechanical plastic deformation of the

stained top layer leading to arising of quantum cones due to laser heating up of the top layer. Si quantum cone possesses the lowest

work function of electron field emission due to graded band gap structure.

medvids@latnet.lv

Self-construction from 2D to 3D: One-pot layer-by-layer (LbL) assembly of Graphene Oxide (GO) sheets held

together by coordination polymers

2

Mohamed B Zakaria

and

1

Yusuke Yamauchi

1

Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo, 169-8555, World Premier International (WPI) Research Center for Materials

Nanoarchitechtonics (MANA), 2National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

F

or further development of functional materials, a smart construction of functional 2D materials to well-defined 3D constructions

is crucial. The best strategy in this line is a layer-by-layer (LbL) assembly that can provide well-designed alternate layered structures

in nanoscale precision from a variety of functional components. Here, we demonstrate a novel synthetic strategy which entails

deposition of Ni-based cyanide bridged coordination polymer (NiCNNi) flakes on the surface of Graphene Oxide (GO) sheets, and

allows precise control of the resulting lamellar nano-architecture by

in-situ

crystallization. GO sheets are utilized as nucleation sites

promoting the optimized crystal growth of NiCNNi flakes. The NiCNNi-coated GO sheets then self-assembled and are stabilized

as ordered lamellar nanomaterials. This approach might be applied to many other inorganic-organic hybrids for ordered layer-by-

layer (LbL) architectures. Regulated thermal treatment under nitrogen yields Ni

3

C-GO composite with a similar morphology to

the starting material. The Ni

3

C-GO composite exhibits outstanding electro catalytic activity with strong durability for the oxygen

reduction reaction.

MOHAMED.Barakat@nims.go.jp

J Nanomed Nanotechnol 2016, 7:4 (Suppl)

http://dx.doi.org/10.4172/2157-7439.C1.041