Page 64
Notes:
conferenceseries
.com
Joint Conference
July 17-18, 2017 Chicago, USA
International Conference on
DIAMOND AND CARBON MATERIALS & GRAPHENE AND SEMICONDUCTORS
Volume 6, Issue 6 (Suppl)
J Material Sci Eng, an open access journal
ISSN: 2169-0022
Diamond and Carbon 2017 & Graphene 2017
July 17-18, 2017
Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by
dissociative hydrogen adsorption
Yung Woo Park
and
S J Hong
Seoul National University, South Korea
T
he effect of hydrogen adsorption on twisted bilayer graphene (tBLG) was studied. Raman spectroscopy and the electrical
transport properties (electrical resistance and thermoelectric power) confirm that the electron doping by hydrogen
adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping
behavior were observed at various twist angles (0o, 5o, 12.5o and 30o), and the adsorptions follow the first–order Langmuir-
type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG
with twist angle of 0o, as in Bernal-stacked BLG.
Biography
Yung Woo Park graduated summa cum laude in 1975 from the Physics Department of Seoul National University in South Korea. He received his PhD from University
of Pennsylvania, Philadelphia, United States in 1980. His PhD thesis on the "Electrical Transport Studies of Pure and Doped Polyacetylene" was supervised by
Professor Alan J Heeger. He was involved in the original discovery of conducting polymers in 1977 under the guidance of Prof. Alan J Heeger. He has made
unique contributions on the synthesis and transport studies of carbon based nanostructures such as conducting polymer nanofibers, carbon nanotube, organic
conductors, molecular conductors and graphene. He has also contributed significantly to the transport and mechanism studies of highly correlated materials, such
as high Tc superconductors. In particular, his recent discovery of "Zero magneto resistance in polymer nanofibers" is his most important and seminal achievement.
In particular, the CNT based nonvolatile MEMS memory has achieved a 1000 times faster switching speed, applicable to the MP3s, smart phones and cameras
with very low power consumption and possible multinary bit devices.
ywpark@snu.ac.krYung Woo Park et al., J Material Sci Eng 2017, 6:6(Suppl)
DOI: 10.4172/2169-0022-C1-076