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conferenceseries
.com
Joint Conference
July 17-18, 2017 Chicago, USA
International Conference on
DIAMOND AND CARBON MATERIALS & GRAPHENE AND SEMICONDUCTORS
Volume 6, Issue 6 (Suppl)
J Material Sci Eng, an open access journal
ISSN: 2169-0022
Diamond and Carbon 2017 & Graphene 2017
July 17-18, 2017
Luminescence characteristics and related damage evolution of carbon ion implanted GaN
Jinlong Liu, Liangxian Chen, Junjun Wei, Lifu Hei, Xu Zhang
and
Chengming Li
University of Science and Technology Beijing, China
Statement of the Problem:
Carbon doped GaN has been widely studied and applied for p-type GaN and yellow light-emitting
diodes. However, the sites carbon located, related with luminescence, characteristics has not been confirmed.
Methodology & Theoretical Orientation:
GaN was implanted with carbon ion using dose of 1×1017 cm-
2
and 2×1017 cm-
2
and energy of 30 keV and 40 keV. And then the implanted samples were annealed at 800
o
c for 20 min and 1 h under the N
2
atmosphere. The luminescence characteristics of carbon ion implanted GaN was evaluated by PL spectrum with wavelength of
325 nm. The lattice damage of GaN was characterized by Raman spectrum and corresponding vacancy-defect evolution before
and after annealing was measured by slow positron annihilation.
Conclusion & Significance:
Most of carbon atoms would be located at the interstitial sites after carbon ion implantation due
to the absorption of vacancies, and no obvious luminescence could be observed. As the implanted samples were annealed,
strong yellow luminescence was emitted and the vacancy for N (VN) or vacancy for Ga (VGa) was reduced resulting from the
migration of interstitial carbon (C
i
) and formation of complex between them. By contrast, samples with higher dose showed
stronger yellow light emission, which was related with the lower migration rate of C
i
and saturated concentration of C
i
-V
complex.
Biography
Jinlong Liu has his expertise in preparation and functional application of carbon materials including diamond, graphene, carbon dots and so on. He focuses on the
mechanism of research on the carbon materials functional properties. He has researched the conductivity mechanism of H-terminated diamond and developed the
MESFET devices. He also conducted research on luminescence mechanism of carbon dots prepared by micro wave heating and clarified the chemical reaction
mechanism. In this work, he studied the defective evolution of carbon ion implanted GaN after annealing by slow positron annihilation, and the results will provide
a framework to understand the behavior of carbon in GaN. It will be of great importance in expanding further application of C doped GaN.
liujinlong@ustb.edu.cnJinlong Liu et al., J Material Sci Eng 2017, 6:6(Suppl)
DOI: 10.4172/2169-0022-C1-076