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Volume 08
Innovative Energy & Research
ISSN: 2576-1463
Advanced Energy Materials 2019
July 11-12, 2019
conference
series
.com
July 11-12, 2019 | Zurich, Switzerland
21
st
International Conference on
Advanced Energy Materials and Research
Page 20
Yuichi Setsuhara, Innov Ener Res 2019, Volume 08
Reactive plasma processes for formation of high-mobility IGZO thin film transistors
R
eactive plasma process systems have been developed via installation of inductively-coupled plasmas (ICP) sustained
with low-inductance antenna (LIA) for low-temperature fabrication of flexible electronics, which require large area
and lowdamage processes with reactivity control capabilities at low substrate temperature. Major advantage of the reactive
processing system is that the reactivity during film-deposition processes can be enhanced and controlled via low-damage
and high-density plasma production for low-temperature processing of devices. The reactive plasma processes have
been applied to sputtering deposition of transparent amorphous oxide semiconductor a-InGaZnOx (a-IGZO), which
has attracted great attentions as key material for next-generation flexible electronics. So far post annealing at elevated
temperature (as high as 400°C) was required. Thus the conventional process for fabrication of the IGZO TFTs has been
carried out on glass substrates. With the advanced reactivity controlled plasma processes in this study, a-IGZO thin-film
transistors (TFTs) with mobility as high as or higher than 40 cm
2
/Vs was successfully formed at substrate temperature
less than 200°C. In this presentation, the reactive plasma processes are presented for low-temperature formation of IGZO
TFTs.
Recent Publications
1.
K Takenaka, M Endo, G Uchida and Y Setsuhara (2018) Fabrication of high-performance InGaZnOx thin film
transistors based on control of oxidation using a low-temperature plasma. Applied Physics Letters 112:152103.
2.
K Takenaka, Y Setsuhara, J G Han, G Uchida and A Ebe (2018) Plasma-enhanced reactive linear sputtering
source for formation of silicon-based thin films. Review of Scientific Instruments 89(8):083902.
3.
Kosuke Takenaka, Yoshikatsu Satake, Giichiro Uchida and Yuichi Setsuhara (2017) Low-temperature formation
of C-axis orientated aluminumnitride thin films with plasma-assisted reactive pulsed-DCmagnetron sputtering.
Japanese Journal of Applied Physics 57: 01AD06.
Yuichi Setsuhara
Osaka University, Japan