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Notes:
conferenceseries
.com
March 20-22, 2017 Orlando, USA
3
rd
International Conference on
Smart Materials & Structures
Volume 6, Issue 2 (Suppl)
J Material Sci Eng
ISSN: 2169-0022 JME, an open access journal
Smart Materials 2017
March 20-22, 2017
Electrical resistivity change of SeTeAg compositions to thermal and pressure as stress
Neeru Chaudhary*, K.N.N. Prasad
and
Navdeep Goyal*
Panjab University, India
T
o understand the behavior of materials for applications in solid state electronic devices, the materials are to be exposed to different
stresses such as thermal, electrical, humidity, optical, nuclear radiations, pressure (static or dynamic) etc. to better understand
their structural, morphology, conduction, optical and sensing properties. The Se
85
-xTe
15
Ag
x
compositions prepared frommelt-quench
technique were exposed to High Pressure (0-10 GPa) and Temperature (300K-373K). The results depict the change in resistivity with
respect to pressure in forward as well as backward pressurization. These results depicts that there is very small change in resistivity
with change in pressure and the change in resistivity with respect to pressure follows the same pattern, when the pressure is applied
from atmospheric pressure to 10 GPa and vice versa. The results of resistivity change with the variation of Silver in the compositions
are also reported in this study. Similar results are observed in case of resistivity change with respect to temperature. Some deviation is
observed in the results which are well explained with average coordination number, fermi level change and crystallinity.
Biography
Er. Neeru Chaudhary is an Assistant Professor in Department of Physics, Panjab University, Chandigarh. She got her B.E. in Instrumentation in 1999 from Dr. B.A.M.
University, Aurangabad (M.S.) and M.Tech in Instrumentation from University Centre of Instrumentation and Microelectronics, Panjab University Chandigarh in 2001.
Currently Er. Neeru Chaudhary’s research is focused on studying Electrical and Optical properties of Semiconductor materials to be used in solid state electronic devices.
The rapid growth in the field of MEMS and NEMS has led to production of variety of new materials. Hence the study of properties of the materials under different stresses
is very important field in Material Science Engineering. She is life member of two national professional bodies; Indian Society of Technical Education (ISTE) and Indian
Association of Physics Teachers (IAPT).
neeru369@pu.ac.inNeeru Chaudhary et al., J Material Sci Eng 2017, 6:2 (Suppl)
http://dx.doi.org/10.4172/2169-0022.C1.061