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conferenceseries
.com
March 20-22, 2017 Orlando, USA
3
rd
International Conference on
Smart Materials & Structures
Volume 6, Issue 2 (Suppl)
J Material Sci Eng
ISSN: 2169-0022 JME, an open access journal
Smart Materials 2017
March 20-22, 2017
Enhanced surface passivation effect in porous GaN for high performance H
2
gas sensors at room
temperature
Adel Najar
1
, Muhammad Shafa
1
, Tien Khee Ng
2
and
Boon S. Ooi
2
1
United Arab Emirates University, UAE
2
King Abdullah University of Science and Technology (KAUST), KSA
D
iatomic hydrogen is a colorless, odorless, and tasteless gas which, when combined with air, poses a safety hazard due to its wide
flammability range where high burning velocities and explosive tendencies compound the risks. At high concentrations it can
also act as an asphyxiant. Its importance stems primarily from its use as a reactant for the chemical industry in the processing of
ammonia, petrochemicals, and methanol. Effective H
2
sensors that can quickly and sensitively respond to H
2
gas are crucial for the safe
deployment of all hydrogen-based applications. Ideally, a H
2
gas sensor should be compact, sensitive, and durable, have short response
times, and be simple to fabricate. We describe the fabrication of porous GaN prepared by metal electroless etching method. Then,
porous GaN was treated by octadecylthiol (ODT) for the passivation of the surface states. At room temperature, the passivation of the
porous GaN sample enhance the detection of H
2
gas. After passivation using ODT, the sample show excellent selectivity compared to
other gases (i.e. H
2
S, C
2
H
4
). Simultaneously, this sensors exhibited good sensing repeatability and stability. This enhancement in gas
sensing properties after passivation was attributed to the effect of ODT to reduce the surface states effect. The attractive low-cost, low
power consumption and high performance of the resultant passivation porous GaN gas sensor assure their potential application for
H
2
gas sensor working at low temperature.
Biography
Adel Najar received his PhD in Physics at ENSSAT- Rennes 1 University in France and MBA from Beuth Hochschule Fur Technik Berlin in Germany in 2007 and 2016,
respectively. He served as a post-doctorat at Saint-Gobain Research Company in collaboration with Grenoble Institute of Technology in France, a Research Scientist at
LETI at the Alternative Energies and Atomic Energy Commission (CEA) in France as well as at KAUST in Saudi Arabia, and Senior Research Scientist at Atsugi R&D
Center, NTT Corp. in Japan. From 2015, Dr. Najar appointed as faculty in UAE University in UAE. His main research interests is the development of semiconductor nano-
structure for photonics and nanophotonics application. Dr. Najar is an author and co-author of more than 50 papers in peer-reviewed journals, conferences, book chapter
and patents.
adel.najar@uaeu.ac.aeAdel Najar et al., J Material Sci Eng 2017, 6:2 (Suppl)
http://dx.doi.org/10.4172/2169-0022.C1.061