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Volume 4, Issue 4 (Suppl)

J Laser Opt Photonics, an open access journal

ISSN: 2469-410X

Optics 2017

November 15-17, 2017

November 15-17, 2017 | Las Vegas, USA

International Conference and Exhibition on

Lasers, Optics & Photonics

In situ

and

ex situ

optical characterization of nitride semiconductor crystal for advanced optical and power

electronic devices

S Nitta, Z Liu, S Usami, Z Ye, K Nagamatsu, M Kushimoto, M Deki, A Tanaka, Y Honda, M Pristovsek

and

H Amano

Nagoya University, Japan

ore compact, lighter and long lifetime mobile devices and more environmental friendly power supplies are being developed

by utilizing nitride semiconductors such as AlN, GaN, InN and their alloys. Together with high-efficiency InGaN blue light

emitting diodes (LEDs), high-spec and long-lifetime portable devices and general lighting will play an important role in a sustainable

modern 21

century society. AlGaN/GaN high electronmobility transistors have been used in new-generationmobile communication

bases, delivering more data with lower consumption. Finally, ultraviolet LEDs are widely used for curing and germicidal disinfection.

The potential of nitride semiconductors is not limited to these applications, but to achieve their potential, optics can help a lot.

High-quality, high-indium-content InGaN is a prerequisite for long-wavelength visible emission from green to red. However, InGaN

is difficult to grow with higher indium content because of the lattice parameters and growth conditions mismatch between GaN

and InN. Indium fluctuation and strain relaxation introduced by morphological degradation are substantial challenges. In order to

monitor crystal properties and surface evolution during growth, we used a three-wavelength laser beam scattering

in situ

monitoring

system on a horizontal metalorganic vapor phase epitaxy reactor. For electronic devices,

ex situ

emission microscopy is a powerful

tool for the analysis of critical defects on vertical GaN power electronic devices. The optical emission image of a biased device reflects

leakage information and allows us to identify the properties of defects.

Biography

S Nitta obtained his PhD in 2003 from Meijo University, Japan. Since then, he has been developing MOVPE equipment and high-efficiency blue and white LEDs at compa-

nies. In 2015, he joined Nagoya University as a designated Associate Professor. His research is focused on the epitaxial and bulk crystal growth of nitride semiconductors

and their applications to future optical and electronic devices.

nitta@nagoya-u.jp

S Nitta et al., J Laser Opt Photonics 2017, 4:4 (Suppl)

DOI: 10.4172/2469-410X-C1-017