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Journal of Astrophysics & Aerospace Technology | ISSN: 2329-6542 | Volume 6
Atomic and Nuclear Physics
4
th
International Conference on
October 26-27, 2018 | Boston, USA
New technique of thin silicon epitaxial detectors and application of it to nuclear physics and heavy ions
Andrzej Kordyasz
University of Warsaw, Poland
S
ince thickness of silicon detectors made planar technology is limited to about 300 µm we have elaborated the new technology
of thin detectors named “Low-temperature technique of thin silicon ion implanted epitaxial detectors”. In this technique the
photolithography, ion implantation and high-temperature anealing of planar technology is replaced by application mechanical
mask followed by ion implantation, Al evaporation and long-time, low-temperature baking of prepared silicon detectors in the
environmental atmosphere (A. J. Kordyasz
et al.
, Eur. Phys. J.
A51
(2015) 15). Using this technique the 5 µm thick strip eptaxial
detectors have been produced (A. J. Kordyasz
et al.
, Acta Phys. Pol.
B47
(2016) 207). The detector strip widths of about 10 µm on 5
µm thick silicon epitaxial layer were achieved (A. J. Kordyasz
et al.
, HIL Annual Report 2016, page 77). In the proposed talk the “Low
-temperature technique of thin silicon ion implanted epitaxial detectors” will be presented and new results of measurements will be
shown. Future application to nuclear physics and heavy ions will be discussed.
kord@slcj.uw.edu.plJ Astrophys Aerospace Technol 2018, Volume 6
DOI: 10.4172/2329-6542-C3-024