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Volume 7 Innovative Energy & Research
ISSN: 2576-1463 Advanced Energy Materials 2018
August 13-14, 2018
August 13-14, 2018 | Dublin, Ireland
20th International Conference on
Advanced Energy Materials and Research
Towards sensitive terahertz detection via thermoelectric manipulation in graphene transistors
Gang Chen
Shanghai Institute of Technical Physics - Chinese Academy of Sciences, China
Graphene has been highly sought-after as a potential candidate for hot electron terahertz (THz) detection benefiting from
its strong photon absorption, fast carrier relaxation and weak electron-phonon coupling. Nevertheless so far graphene
based thermoelectric THz photo detection is still hindered by the low responsivity owing to the relatively low photo-electric
efficiency. In this work, we provide a straightforward strategy for the enhanced THz detection based on antenna-coupled CVD
graphene transistors with the introduction of symmetric paired fingers. This design enables switchable photo detection modes
by controlling of the interaction between the THz field and free hot carriers in graphene channel through different contacting
configurations. Hence a novel bias field effect can be activated which leads to a drastic enhancement in THz detection ability
with responsivity up to 280 V/W and Johnson-noise limited minimum noise-equivalent power (NEP) of 100 pW/Hz0.5 at room
temperature. The mechanism of the enhancement of the photoelectric gain is attributed to the thermo photovoltaic instead
of the plasma self-mixing effects; our results offer a promising alternative route to scalable, wafer-level production of high
performance graphene detectors.
Recent Publications:
1. Liu D, et al. (2018) Efficient Raman enhancement on high-quality ultra-clean graphene quantum dots produced by a
quasi-equilibrium plasma-enhanced chemical vapor deposition. Nature Communications 9:193.
2. Liu C, et al. (2018) Towards sensitive terahertz detection via thermoelectric manipulation in graphene transistors.
NPG Asia Materials 10:318-327.
3. Du L, et al. (2018) Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic
substrates. Nanotechnology 29(21):215711.
4. Sun F, et al. (2018) Optical waveguide of buckled CdS nanowires modulated by strain engineering. ACS Photonics
5:746-751.
5. Du L, et al. (2017) Formation of Self-connected Si0.8Ge0.2 lateral nanowires and pyramids on Rib-patterned Si (1 1 10)
substrate. Nanoscale Research Letters 12:70.
Biography
Gang Chen has his expertise in growth of semiconductor materials and the fabrication of opto electronic devices. He received his PhD on Condensed Matter Physics
from Fudan University, Shanghai, China in 2002. Then he had been working at the Institute of Solid State Physics in Johannes Kepler University, Linz, Austria for
ten years on the MBE growth of SiGe based nanostructures and their application in the optoelectronics. Now he is a Professor in Chinese Academy of Sciences,
Shanghai Institute of Technical Physics. He has published more than 60 research papers in peer-reviewed journals. His main research interest is on the field of the
fabrication low dimensional carbon allotrope and their application on ultra-broad photo detection.
Gang Chen, Innov Ener Res 2018, Volume 7
DOI: 10.4172/2576-1463-C1-002