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conferenceseries.com
Volume 7 Innovative Energy & Research
ISSN: 2576-1463 Advanced Energy Materials 2018
August 13-14, 2018
August 13-14, 2018 | Dublin, Ireland
20th International Conference on
Advanced Energy Materials and Research
2. Di Bartolomeo A, Luongo G, Giubileo F, Funicello N, Niu G, Schroeder T, Lisker M and Lupina G (2017) Hybrid
graphene/silicon Schottky photodiode with intrinsic gating effect. 2D Materials 4:025075
3. LuongoG, Giubileo F, Genovese L, Iemmo L, MartuccielloN andDi BartolomeoA (2017) I-V and C-V characterization
of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor. Nanomaterials 7(7):158
4. Di Bartolomeo A, Giubileo F, Luongo G, Iemmo L, Martucciello N, Niu G, Fraschke M, Skibitzki M, Schroeder T and
Lupina G (2017) Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device. 2D
Materials 4(1):015024.
5. Giubileo F and Di Bartolomeo A (2017) The role of contact resistance in graphene field-effect devices. Progress in
Surface Science 92(3):143-175.
Biography
Antonio Di Bartolomeo received MS and PhD degree in Physics from Salerno University, Italy. He worked as System Engineer for Creative Electronic Systems (CH)
and as Device Engineer for ST Microelectronics (AZ) and Intel Corporation (IE). He started his career in experimental high-energy physics in the CHORUS and
ALICE experiments at the CERN (Geneva, CH). Currently, he works as Associate Professor of Experimental Condensed Matter Physics at the Salerno University,
Italy. He has been Visiting Scientist at IHP Microelectronics, Frankfurt Oder, Germany, and at the Georgetown University, Washington, DC. He has co-authored
two textbooks on general Physics and more than 80 peer-reviewed research articles and is in the Editorial Board of Nanotechnology (IOP) and Nanomaterials
(MDPI). His present research interests include: Optical and electrical properties of carbon nanotubes, graphene, 2D materials and composite materials; graphene/
semiconductor heterojunctions and their application as photodetectors, solar cells and chemical sensors; Van der Waals heterojunctions of 2D layered materials;
field-effect transistors; tunneling transistors; non-volatile memories; CMOS technologies; solid-state radiation detectors; field emission.