Abstract

Interfaces in Al/Si, Au/Si, and Au/GaAs materials have been studied using variable-energy positron annihilation spectroscopy. To discover the kind of locations that positrons were likely to sample, Doppler broadening results were analysed using computational fits of the ROYPROF programme. The positron work function of these materials was brought into consideration after it was discovered that the interfaces were working as a capturing thin layer with insignificant positrons halted in them and that their properties stemmed only from positrons diffusing to these interfaces. The interfaces are all 1 nm thick and act as an absorbing sink for all thermal positrons that diffuse in their direction, according to all fittings. This either points to the presence of open volume flaws or to a flaw in the accepted theoretical models for positron affinities. Measurements made after applying external electric fields to an Al/Si sample are used to support the conclusion. The sensitivity of interfaces in these endeavours and their significance in data analysis and the creation of fitting cods have been well shown by theoretical fittings.